Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

P. M. Lenahan, T. D. Mishima, J. Jumper, T. N. Fogarty, R. T. Wilkins

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P b1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO 2 interface trap defect, the P b0 center.

Original languageEnglish (US)
Pages (from-to)2131-2135
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume48
Issue number6 I
DOIs
StatePublished - Dec 2001
Event2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Canada
Duration: Jul 16 2001Jul 20 2001

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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