Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

P. M. Lenahan, J. J. Mele, J. P. Campbell, A. Y. Kang, R. K. Lowry, D. Woodbury, S. T. Liu, R. Weimer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Stress induced leakage current is an important and quite possibly fundamental physically limiting problem in the scaling of metal-oxide-silicon integrated circuitry. We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon "dangling bond" centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200°C) in air. We also propose a model which provides an extremely straightforward explanation for the frequently reported close correspondence between the generation of stress induced leakage current and the generation of Si-SiO2 interface states.

Original languageEnglish (US)
Title of host publication2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages150-155
Number of pages6
ISBN (Electronic)0780365879
DOIs
StatePublished - Jan 1 2001
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: Apr 30 2001May 3 2001

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2001-January
ISSN (Print)1541-7026

Other

Other39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
CountryUnited States
CityOrlando
Period4/30/015/3/01

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents'. Together they form a unique fingerprint.

  • Cite this

    Lenahan, P. M., Mele, J. J., Campbell, J. P., Kang, A. Y., Lowry, R. K., Woodbury, D., Liu, S. T., & Weimer, R. (2001). Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents. In 2001 IEEE International Reliability Physics Symposium Proceedings - 39th Annual (pp. 150-155). [922894] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2001-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2001.922894