Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

Patrick M. Lenahan, J. J. Melc, J. P. Campbell, A. Y. Kang, R. K. Lowry, D. Woodbury, S. T. Liu, R. Weimer

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Stress induced leakage current is an important and quite possibly fundamental physically limiting problem in the scaling of metal-oxide-silicon integrated circuitry. We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon "dangling bond" centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200°C) in air. We also propose a model which provides an extremely straightforward explanation for the frequently reported close correspondence between the generation of stress induced leakage current and the generation of Si/SiO2 interface states.

Original languageEnglish (US)
Article number24
Pages (from-to)150-155
Number of pages6
JournalAnnual Proceedings-Reliability Physics (Symposium)
DOIs
StatePublished - Jan 1 2001

Fingerprint

Dangling bonds
Leakage currents
Silicon
Defects
Oxides
Oxygen
Interface states
Silicon oxides
Paramagnetic resonance
Silica
Thin films
Air
Metals
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Lenahan, Patrick M. ; Melc, J. J. ; Campbell, J. P. ; Kang, A. Y. ; Lowry, R. K. ; Woodbury, D. ; Liu, S. T. ; Weimer, R. / Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents. In: Annual Proceedings-Reliability Physics (Symposium). 2001 ; pp. 150-155.
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abstract = "Stress induced leakage current is an important and quite possibly fundamental physically limiting problem in the scaling of metal-oxide-silicon integrated circuitry. We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon {"}dangling bond{"} centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200°C) in air. We also propose a model which provides an extremely straightforward explanation for the frequently reported close correspondence between the generation of stress induced leakage current and the generation of Si/SiO2 interface states.",
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Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents. / Lenahan, Patrick M.; Melc, J. J.; Campbell, J. P.; Kang, A. Y.; Lowry, R. K.; Woodbury, D.; Liu, S. T.; Weimer, R.

In: Annual Proceedings-Reliability Physics (Symposium), 01.01.2001, p. 150-155.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents

AU - Lenahan, Patrick M.

AU - Melc, J. J.

AU - Campbell, J. P.

AU - Kang, A. Y.

AU - Lowry, R. K.

AU - Woodbury, D.

AU - Liu, S. T.

AU - Weimer, R.

PY - 2001/1/1

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AB - Stress induced leakage current is an important and quite possibly fundamental physically limiting problem in the scaling of metal-oxide-silicon integrated circuitry. We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon "dangling bond" centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200°C) in air. We also propose a model which provides an extremely straightforward explanation for the frequently reported close correspondence between the generation of stress induced leakage current and the generation of Si/SiO2 interface states.

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