Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

Xue Liu, Jinyu Liu, Liubov Yu Antipina, Jin Hu, Chunlei Yue, Ana M. Sanchez, Pavel B. Sorokin, Zhiqiang Mao, Jiang Wei

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8 system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8 nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.

Original languageEnglish (US)
Pages (from-to)6188-6195
Number of pages8
JournalNano letters
Volume16
Issue number10
DOIs
StatePublished - Oct 12 2016

Fingerprint

Nanowires
nanowires
Single crystals
Fabrication
Crystals
fabrication
single crystals
crystals
Field effect transistors
field effect transistors
Semiconductor materials
p-type semiconductors
n-type semiconductors
Logic gates
Energy harvesting
Optoelectronic devices
ribbons
logic
Nanostructures
Electronic equipment

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Liu, Xue ; Liu, Jinyu ; Antipina, Liubov Yu ; Hu, Jin ; Yue, Chunlei ; Sanchez, Ana M. ; Sorokin, Pavel B. ; Mao, Zhiqiang ; Wei, Jiang. / Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals. In: Nano letters. 2016 ; Vol. 16, No. 10. pp. 6188-6195.
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abstract = "Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8 system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8 nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.",
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Liu, X, Liu, J, Antipina, LY, Hu, J, Yue, C, Sanchez, AM, Sorokin, PB, Mao, Z & Wei, J 2016, 'Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals', Nano letters, vol. 16, no. 10, pp. 6188-6195. https://doi.org/10.1021/acs.nanolett.6b02453

Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals. / Liu, Xue; Liu, Jinyu; Antipina, Liubov Yu; Hu, Jin; Yue, Chunlei; Sanchez, Ana M.; Sorokin, Pavel B.; Mao, Zhiqiang; Wei, Jiang.

In: Nano letters, Vol. 16, No. 10, 12.10.2016, p. 6188-6195.

Research output: Contribution to journalArticle

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AU - Liu, Xue

AU - Liu, Jinyu

AU - Antipina, Liubov Yu

AU - Hu, Jin

AU - Yue, Chunlei

AU - Sanchez, Ana M.

AU - Sorokin, Pavel B.

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AU - Wei, Jiang

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AB - Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8 system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8 nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.

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