Direct integration of magnetoelectric sensors with microelectronics - Improved field sensitivity, signal-to-noise ratio and frequency response

Z. Fang, F. Li, N. Mokhariwale, S. Datta, Qiming Zhang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The large magnetoelectric (ME) coupling in the ME laminates makes them attractive for ultrasensitive room temperature magnetic sensors. Here we investigate the field sensitivity and signal-to-noise ratio (SNR) of ME laminates, consisting of magnetostrictive and piezoelectric layers (Metglas and piezopolymer PVDF were used as the model system), which are directly integrated with two different modes of low noise readout circuits - charge mode and voltage mode. For the sensor system with charge mode readout circuit, both the theoretical analysis and experimental results show that increasing the number of piezolayer layers can improve the SNR, especially at low frequencies. We also introduce a figure of merit to measure the overall influence of the piezolayer properties on the SNR and show that the newly developed piezoelectric single crystals of PMN-PT and PZN-PT have the promise to achieve a very high SNR and consequently ultra-high sensitivity room temperature magnetic sensors. The results show that the ME coefficients used in early ME composites development works may not be relevant to the SNR. The results also show that enhancing the piezomagnetic coefficient, for example, by employing the flux concentration effect, can lead to enhanced SNR. For the sensor system in-package with voltage mode readout circuits, both theories and experiments show that the system in package exhibits frequency independent field sensitivity at the whole frequency range of interests. The package ME sensors investigated here show the potential of chip scale ME magnetic sensors with high SNR and sensitivity.

    Original languageEnglish (US)
    Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
    Pages614-619
    Number of pages6
    DOIs
    StatePublished - Dec 1 2010
    Event9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
    Duration: Nov 1 2010Nov 4 2010

    Other

    Other9th IEEE Sensors Conference 2010, SENSORS 2010
    CountryUnited States
    CityWaikoloa, HI
    Period11/1/1011/4/10

    Fingerprint

    Microelectronics
    Frequency response
    Signal to noise ratio
    Sensors
    Magnetic sensors
    Temperature sensors
    Laminates
    Networks (circuits)
    Circuit theory
    Electric potential
    Single crystals
    Fluxes
    Composite materials
    Experiments

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

    Cite this

    Fang, Z. ; Li, F. ; Mokhariwale, N. ; Datta, S. ; Zhang, Qiming. / Direct integration of magnetoelectric sensors with microelectronics - Improved field sensitivity, signal-to-noise ratio and frequency response. IEEE Sensors 2010 Conference, SENSORS 2010. 2010. pp. 614-619
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    title = "Direct integration of magnetoelectric sensors with microelectronics - Improved field sensitivity, signal-to-noise ratio and frequency response",
    abstract = "The large magnetoelectric (ME) coupling in the ME laminates makes them attractive for ultrasensitive room temperature magnetic sensors. Here we investigate the field sensitivity and signal-to-noise ratio (SNR) of ME laminates, consisting of magnetostrictive and piezoelectric layers (Metglas and piezopolymer PVDF were used as the model system), which are directly integrated with two different modes of low noise readout circuits - charge mode and voltage mode. For the sensor system with charge mode readout circuit, both the theoretical analysis and experimental results show that increasing the number of piezolayer layers can improve the SNR, especially at low frequencies. We also introduce a figure of merit to measure the overall influence of the piezolayer properties on the SNR and show that the newly developed piezoelectric single crystals of PMN-PT and PZN-PT have the promise to achieve a very high SNR and consequently ultra-high sensitivity room temperature magnetic sensors. The results show that the ME coefficients used in early ME composites development works may not be relevant to the SNR. The results also show that enhancing the piezomagnetic coefficient, for example, by employing the flux concentration effect, can lead to enhanced SNR. For the sensor system in-package with voltage mode readout circuits, both theories and experiments show that the system in package exhibits frequency independent field sensitivity at the whole frequency range of interests. The package ME sensors investigated here show the potential of chip scale ME magnetic sensors with high SNR and sensitivity.",
    author = "Z. Fang and F. Li and N. Mokhariwale and S. Datta and Qiming Zhang",
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    Fang, Z, Li, F, Mokhariwale, N, Datta, S & Zhang, Q 2010, Direct integration of magnetoelectric sensors with microelectronics - Improved field sensitivity, signal-to-noise ratio and frequency response. in IEEE Sensors 2010 Conference, SENSORS 2010., 5690434, pp. 614-619, 9th IEEE Sensors Conference 2010, SENSORS 2010, Waikoloa, HI, United States, 11/1/10. https://doi.org/10.1109/ICSENS.2010.5690434

    Direct integration of magnetoelectric sensors with microelectronics - Improved field sensitivity, signal-to-noise ratio and frequency response. / Fang, Z.; Li, F.; Mokhariwale, N.; Datta, S.; Zhang, Qiming.

    IEEE Sensors 2010 Conference, SENSORS 2010. 2010. p. 614-619 5690434.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    AU - Datta, S.

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