Direct lithographic top contacts for pentacene organic thin-film transistors

C. C. Kuo, T. N. Jackson

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2 /V-s. Contact resistance extracted from these OTFTs is about (5× 107) - (5× 108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.

Original languageEnglish (US)
Article number053304
JournalApplied Physics Letters
Volume94
Issue number5
DOIs
StatePublished - Feb 16 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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