We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2 /V-s. Contact resistance extracted from these OTFTs is about (5× 107) - (5× 108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)