Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

J. G. Braden, J. S. Parker, P. Xiong, S. H. Chun, Nitin Samarth

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Abstract

Direct measurement of the spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs was carried out using Andreev reflection spectroscopy. The conductance spectra of high transparency junction showed an intrinsic value for P greater than 85%. Results showed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for the material.

Original languageEnglish (US)
Pages (from-to)566021-566024
Number of pages4
JournalPhysical Review Letters
Volume91
Issue number5
StatePublished - Aug 1 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Braden, J. G., Parker, J. S., Xiong, P., Chun, S. H., & Samarth, N. (2003). Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As. Physical Review Letters, 91(5), 566021-566024.