Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors

J. T. Ryan, P. M. Lenahan, J. Robertson, G. Bersuker

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12 Scopus citations

Abstract

We show that a SiHf O2 interfacial layer defect with an electron spin resonance spectrum similar to that of some E′ center variants responds to oxide bias consistent with an amphoteric defect. The spectrum is weakly orientation dependent indicating that the defect does not reside in a completely amorphous matrix. The defect's spin lattice relaxation time is much shorter than that of conventional E′ centers suggesting that the defect involves some coupling of a Hf atom to a nearby oxygen deficient silicon dangling bond defect. This defect very likely plays an important role in widely reported instabilities in Hf O2 based transistors.

Original languageEnglish (US)
Article number123506
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - Apr 3 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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