Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs

J. T. Ryan, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby hafnium atom.

Original languageEnglish (US)
Title of host publication2007 IEEE International Integrated Reliability Workshop Final Report, IRW
Pages107-110
Number of pages4
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE International Integrated Reliability Workshop, IRW - S. Lake Tahoe, CA, United States
Duration: Oct 15 2007Oct 18 2007

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2007 IEEE International Integrated Reliability Workshop, IRW
CountryUnited States
CityS. Lake Tahoe, CA
Period10/15/0710/18/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Ryan, J. T., & Lenahan, P. M. (2007). Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs. In 2007 IEEE International Integrated Reliability Workshop Final Report, IRW (pp. 107-110). [4469232] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2007.4469232