Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors

J. T. Krick, P. M. Lenahan, G. J. Dunn

Research output: Contribution to journalArticle

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Using a modified electron spin resonance technique known as spin-dependent recombination, we have found that channel hot hole injection in n channel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as the Pbo center. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.

Original languageEnglish (US)
Pages (from-to)3437-3439
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - Dec 1 1991


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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