Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors

C. J. Cochrane, P. M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
PublisherTrans Tech Publications Ltd
Pages299-302
Number of pages4
ISBN (Print)9780878493340
DOIs
StatePublished - 2009

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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