Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
Pages299-302
Number of pages4
DOIs
StatePublished - Dec 1 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors'. Together they form a unique fingerprint.

  • Cite this

    Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2009). Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 299-302). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.299