Direct observation of the structure of defect centers involved in the negative bias temperature instability

We utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p -channel metal-oxide-silicon field-effect transistors. The defects include two SiSi O2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E′). Our observations strongly suggest that both Pb0 and Pb1 defects play major roles in the negative bias temperature instability.