Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects

Jeffrey M. Catchmark, Guy P. Lavallee, Michael Rogosky, Youngchul Lee

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.

Original languageEnglish (US)
Pages (from-to)L12-L15
JournalJournal of Electronic Materials
Volume34
Issue number3
DOIs
StatePublished - Mar 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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