Directly lithographic top contacts for pentacene organic thin-film transistors

Chung Chen Kuo, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm 2/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages85-86
Number of pages2
DOIs
StatePublished - 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Kuo, C. C., & Jackson, T. N. (2004). Directly lithographic top contacts for pentacene organic thin-film transistors. In Device Research Conference - Conference Digest, 62nd DRC (pp. 85-86). [III.-17] https://doi.org/10.1109/DRC.2004.1367795