Dislocation bending and tensile stress generation in GaN and AlGaN films

Srinivasan Raghavan, Ian C. Manning, Xiaojun Weng, Joan Marie Redwing

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The growth of GaN and AlGaN films is accompanied by dislocation bending, interaction, density reduction and tensile stress generation to varying degrees. A kinetic model involving outdiffusion of atoms at the growth surface has been adapted to rationalize all of these phenomena using a single platform. Active contribution of dislocation interaction, apart from stress and a surface chemical potential, to the driving force for outdiffusion of atoms from the growth surface has been considered. The kinetic model has then been used to explain stress evolution during growth of GaN films on Si using an AlN buffer layer, an example of a most general case. Stress-thickness relations obtained from the model have been fitted to experimental data to derive basic outdiffusion parameters. These parameters have been used to analyze experimental observations of dislocation structure evolution. The model is able to account for the varying degrees of dislocation bending and interaction observed in these films.

Original languageEnglish (US)
Pages (from-to)35-42
Number of pages8
JournalJournal of Crystal Growth
Volume359
Issue number1
DOIs
StatePublished - Nov 15 2012

Fingerprint

tensile stress
Tensile stress
Atoms
Kinetics
Chemical potential
kinetics
interactions
Buffer layers
atoms
platforms
buffers
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Raghavan, Srinivasan ; Manning, Ian C. ; Weng, Xiaojun ; Redwing, Joan Marie. / Dislocation bending and tensile stress generation in GaN and AlGaN films. In: Journal of Crystal Growth. 2012 ; Vol. 359, No. 1. pp. 35-42.
@article{51aa01fbfce74ca2a556aa5fa072d270,
title = "Dislocation bending and tensile stress generation in GaN and AlGaN films",
abstract = "The growth of GaN and AlGaN films is accompanied by dislocation bending, interaction, density reduction and tensile stress generation to varying degrees. A kinetic model involving outdiffusion of atoms at the growth surface has been adapted to rationalize all of these phenomena using a single platform. Active contribution of dislocation interaction, apart from stress and a surface chemical potential, to the driving force for outdiffusion of atoms from the growth surface has been considered. The kinetic model has then been used to explain stress evolution during growth of GaN films on Si using an AlN buffer layer, an example of a most general case. Stress-thickness relations obtained from the model have been fitted to experimental data to derive basic outdiffusion parameters. These parameters have been used to analyze experimental observations of dislocation structure evolution. The model is able to account for the varying degrees of dislocation bending and interaction observed in these films.",
author = "Srinivasan Raghavan and Manning, {Ian C.} and Xiaojun Weng and Redwing, {Joan Marie}",
year = "2012",
month = "11",
day = "15",
doi = "10.1016/j.jcrysgro.2012.08.020",
language = "English (US)",
volume = "359",
pages = "35--42",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

Dislocation bending and tensile stress generation in GaN and AlGaN films. / Raghavan, Srinivasan; Manning, Ian C.; Weng, Xiaojun; Redwing, Joan Marie.

In: Journal of Crystal Growth, Vol. 359, No. 1, 15.11.2012, p. 35-42.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dislocation bending and tensile stress generation in GaN and AlGaN films

AU - Raghavan, Srinivasan

AU - Manning, Ian C.

AU - Weng, Xiaojun

AU - Redwing, Joan Marie

PY - 2012/11/15

Y1 - 2012/11/15

N2 - The growth of GaN and AlGaN films is accompanied by dislocation bending, interaction, density reduction and tensile stress generation to varying degrees. A kinetic model involving outdiffusion of atoms at the growth surface has been adapted to rationalize all of these phenomena using a single platform. Active contribution of dislocation interaction, apart from stress and a surface chemical potential, to the driving force for outdiffusion of atoms from the growth surface has been considered. The kinetic model has then been used to explain stress evolution during growth of GaN films on Si using an AlN buffer layer, an example of a most general case. Stress-thickness relations obtained from the model have been fitted to experimental data to derive basic outdiffusion parameters. These parameters have been used to analyze experimental observations of dislocation structure evolution. The model is able to account for the varying degrees of dislocation bending and interaction observed in these films.

AB - The growth of GaN and AlGaN films is accompanied by dislocation bending, interaction, density reduction and tensile stress generation to varying degrees. A kinetic model involving outdiffusion of atoms at the growth surface has been adapted to rationalize all of these phenomena using a single platform. Active contribution of dislocation interaction, apart from stress and a surface chemical potential, to the driving force for outdiffusion of atoms from the growth surface has been considered. The kinetic model has then been used to explain stress evolution during growth of GaN films on Si using an AlN buffer layer, an example of a most general case. Stress-thickness relations obtained from the model have been fitted to experimental data to derive basic outdiffusion parameters. These parameters have been used to analyze experimental observations of dislocation structure evolution. The model is able to account for the varying degrees of dislocation bending and interaction observed in these films.

UR - http://www.scopus.com/inward/record.url?scp=84865789170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865789170&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2012.08.020

DO - 10.1016/j.jcrysgro.2012.08.020

M3 - Article

AN - SCOPUS:84865789170

VL - 359

SP - 35

EP - 42

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -