Dislocation driven spiral and non-spiral growth in layered chalcogenides

Yifan Nie, Adam T. Barton, Rafik Addou, Yongping Zheng, Lee A. Walsh, Sarah M. Eichfeld, Ruoyu Yue, Christopher R. Cormier, Chenxi Zhang, Qingxiao Wang, Chaoping Liang, Joshua Alexander Robinson, Moon Kim, William Vandenberghe, Luigi Colombo, Pil Ryung Cha, Robert M. Wallace, Christopher L. Hinkle, Kyeongjae Cho

Research output: Contribution to journalArticle

Abstract

Two-dimensional materials have shown great promise for implementation in next-generation devices. However, controlling the film thickness during epitaxial growth remains elusive and must be fully understood before wide scale industrial application. Currently, uncontrolled multilayer growth is frequently observed, and not only does this growth mode contradict theoretical expectations, but it also breaks the inversion symmetry of the bulk crystal. In this work, a multiscale theoretical investigation aided by experimental evidence is carried out to identify the mechanism of such an unconventional, yet widely observed multilayer growth in the epitaxy of layered materials. This work reveals the subtle mechanistic similarities between multilayer concentric growth and spiral growth. Using the combination of experimental demonstration and simulations, this work presents an extended analysis of the driving forces behind this non-ideal growth mode, and the conditions that promote the formation of these defects. Our study shows that multilayer growth can be a result of both chalcogen deficiency and chalcogen excess: the former causes metal clustering as nucleation defects, and the latter generates in-domain step edges facilitating multilayer growth. Based on this fundamental understanding, our findings provide guidelines for the narrow window of growth conditions which enables large-area, layer-by-layer growth.

Original languageEnglish (US)
Pages (from-to)15023-15034
Number of pages12
JournalNanoscale
Volume10
Issue number31
DOIs
StatePublished - Aug 21 2018

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Chalcogenides
Multilayers
Chalcogens
Epitaxial growth
Defects
Crystal symmetry
Industrial applications
Film thickness
Nucleation
Demonstrations
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Nie, Y., Barton, A. T., Addou, R., Zheng, Y., Walsh, L. A., Eichfeld, S. M., ... Cho, K. (2018). Dislocation driven spiral and non-spiral growth in layered chalcogenides. Nanoscale, 10(31), 15023-15034. https://doi.org/10.1039/c8nr02280a
Nie, Yifan ; Barton, Adam T. ; Addou, Rafik ; Zheng, Yongping ; Walsh, Lee A. ; Eichfeld, Sarah M. ; Yue, Ruoyu ; Cormier, Christopher R. ; Zhang, Chenxi ; Wang, Qingxiao ; Liang, Chaoping ; Robinson, Joshua Alexander ; Kim, Moon ; Vandenberghe, William ; Colombo, Luigi ; Cha, Pil Ryung ; Wallace, Robert M. ; Hinkle, Christopher L. ; Cho, Kyeongjae. / Dislocation driven spiral and non-spiral growth in layered chalcogenides. In: Nanoscale. 2018 ; Vol. 10, No. 31. pp. 15023-15034.
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Nie, Y, Barton, AT, Addou, R, Zheng, Y, Walsh, LA, Eichfeld, SM, Yue, R, Cormier, CR, Zhang, C, Wang, Q, Liang, C, Robinson, JA, Kim, M, Vandenberghe, W, Colombo, L, Cha, PR, Wallace, RM, Hinkle, CL & Cho, K 2018, 'Dislocation driven spiral and non-spiral growth in layered chalcogenides', Nanoscale, vol. 10, no. 31, pp. 15023-15034. https://doi.org/10.1039/c8nr02280a

Dislocation driven spiral and non-spiral growth in layered chalcogenides. / Nie, Yifan; Barton, Adam T.; Addou, Rafik; Zheng, Yongping; Walsh, Lee A.; Eichfeld, Sarah M.; Yue, Ruoyu; Cormier, Christopher R.; Zhang, Chenxi; Wang, Qingxiao; Liang, Chaoping; Robinson, Joshua Alexander; Kim, Moon; Vandenberghe, William; Colombo, Luigi; Cha, Pil Ryung; Wallace, Robert M.; Hinkle, Christopher L.; Cho, Kyeongjae.

In: Nanoscale, Vol. 10, No. 31, 21.08.2018, p. 15023-15034.

Research output: Contribution to journalArticle

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T1 - Dislocation driven spiral and non-spiral growth in layered chalcogenides

AU - Nie, Yifan

AU - Barton, Adam T.

AU - Addou, Rafik

AU - Zheng, Yongping

AU - Walsh, Lee A.

AU - Eichfeld, Sarah M.

AU - Yue, Ruoyu

AU - Cormier, Christopher R.

AU - Zhang, Chenxi

AU - Wang, Qingxiao

AU - Liang, Chaoping

AU - Robinson, Joshua Alexander

AU - Kim, Moon

AU - Vandenberghe, William

AU - Colombo, Luigi

AU - Cha, Pil Ryung

AU - Wallace, Robert M.

AU - Hinkle, Christopher L.

AU - Cho, Kyeongjae

PY - 2018/8/21

Y1 - 2018/8/21

N2 - Two-dimensional materials have shown great promise for implementation in next-generation devices. However, controlling the film thickness during epitaxial growth remains elusive and must be fully understood before wide scale industrial application. Currently, uncontrolled multilayer growth is frequently observed, and not only does this growth mode contradict theoretical expectations, but it also breaks the inversion symmetry of the bulk crystal. In this work, a multiscale theoretical investigation aided by experimental evidence is carried out to identify the mechanism of such an unconventional, yet widely observed multilayer growth in the epitaxy of layered materials. This work reveals the subtle mechanistic similarities between multilayer concentric growth and spiral growth. Using the combination of experimental demonstration and simulations, this work presents an extended analysis of the driving forces behind this non-ideal growth mode, and the conditions that promote the formation of these defects. Our study shows that multilayer growth can be a result of both chalcogen deficiency and chalcogen excess: the former causes metal clustering as nucleation defects, and the latter generates in-domain step edges facilitating multilayer growth. Based on this fundamental understanding, our findings provide guidelines for the narrow window of growth conditions which enables large-area, layer-by-layer growth.

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Nie Y, Barton AT, Addou R, Zheng Y, Walsh LA, Eichfeld SM et al. Dislocation driven spiral and non-spiral growth in layered chalcogenides. Nanoscale. 2018 Aug 21;10(31):15023-15034. https://doi.org/10.1039/c8nr02280a