Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

Clark Highstrete, Mark Lee, Aaron L. Vallett, Sarah M. Eichfeld, Joan M. Redwing, Theresa S. Mayer

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10 4 SiNWs, the conductance was found to increase with frequency as f s, with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.

Original languageEnglish (US)
Pages (from-to)1557-1561
Number of pages5
JournalNano letters
Volume8
Issue number6
DOIs
StatePublished - Jun 2008

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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