Dissolution windows for wet chemical processing of silicon and silicon dioxide

Potential-pH diagrams for the Si-F-H2O system

Kwadwo Asare Osseo-Asare, Dawei Wei, Kamal K. Mishra

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Potential-pH diagrams are presented for the systems Si-H2O and Si-F-H2O. It is shown that the stability field of elemental silicon lies well below the water stability region, indicating that silicon is highly unstable in water relative to oxidation to Si(IV). Thus, the ability to suppress oxide formation must be attributed to kinetic effects. It is shown further that the introduction of HF and F into the aqueous phase results in a partial displacement by SiF62- of the Si(OH)4(aq) and SiO2 stability fields originally present in the Si-H2O system. Under some conditions, the SiF62- stability domain is nested between two SiO2 stability fields. It is suggested that the minimal etching rates observed at relatively low and relatively high pH solutions of HF may be related in part to the presence of the solubility walls in both pH regimes.

Original languageEnglish (US)
Pages (from-to)749-751
Number of pages3
JournalJournal of the Electrochemical Society
Volume143
Issue number2
DOIs
StatePublished - Jan 1 1996

Fingerprint

Silicon
Silicon Dioxide
dissolving
Dissolution
diagrams
Silica
silicon dioxide
silicon
Processing
Water
Oxides
water
Etching
solubility
Solubility
etching
Oxidation
oxidation
Kinetics
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "Potential-pH diagrams are presented for the systems Si-H2O and Si-F-H2O. It is shown that the stability field of elemental silicon lies well below the water stability region, indicating that silicon is highly unstable in water relative to oxidation to Si(IV). Thus, the ability to suppress oxide formation must be attributed to kinetic effects. It is shown further that the introduction of HF and F into the aqueous phase results in a partial displacement by SiF62- of the Si(OH)4(aq) and SiO2 stability fields originally present in the Si-H2O system. Under some conditions, the SiF62- stability domain is nested between two SiO2 stability fields. It is suggested that the minimal etching rates observed at relatively low and relatively high pH solutions of HF may be related in part to the presence of the solubility walls in both pH regimes.",
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Dissolution windows for wet chemical processing of silicon and silicon dioxide : Potential-pH diagrams for the Si-F-H2O system. / Osseo-Asare, Kwadwo Asare; Wei, Dawei; Mishra, Kamal K.

In: Journal of the Electrochemical Society, Vol. 143, No. 2, 01.01.1996, p. 749-751.

Research output: Contribution to journalArticle

TY - JOUR

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T2 - Potential-pH diagrams for the Si-F-H2O system

AU - Osseo-Asare, Kwadwo Asare

AU - Wei, Dawei

AU - Mishra, Kamal K.

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AB - Potential-pH diagrams are presented for the systems Si-H2O and Si-F-H2O. It is shown that the stability field of elemental silicon lies well below the water stability region, indicating that silicon is highly unstable in water relative to oxidation to Si(IV). Thus, the ability to suppress oxide formation must be attributed to kinetic effects. It is shown further that the introduction of HF and F into the aqueous phase results in a partial displacement by SiF62- of the Si(OH)4(aq) and SiO2 stability fields originally present in the Si-H2O system. Under some conditions, the SiF62- stability domain is nested between two SiO2 stability fields. It is suggested that the minimal etching rates observed at relatively low and relatively high pH solutions of HF may be related in part to the presence of the solubility walls in both pH regimes.

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