Dissolvable metals for transient electronics

Lan Yin, Huanyu Cheng, Shimin Mao, Richard Haasch, Yuhao Liu, Xu Xie, Suk Won Hwang, Harshvardhan Jain, Seung Kyun Kang, Yewang Su, Rui Li, Yonggang Huang, John A. Rogers

Research output: Contribution to journalArticle

145 Citations (Scopus)

Abstract

Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically transient, electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. Effects of reactive dissolution on electrical conduction, morphological change, and chemical transformation of biodegradable metal thin films (Mg, Zn, W, Mo, and Fe) are studied, for application of these metals in water-soluble transient electronic devices. Feasibility of using these dissolvable metals as contacts for n-channel silicon metal oxide field effect transistors (MOSFETs) is also demonstrated.

Original languageEnglish (US)
Pages (from-to)645-658
Number of pages14
JournalAdvanced Functional Materials
Volume24
Issue number5
DOIs
StatePublished - Feb 5 2014

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Electronic equipment
Metals
field effect transistors
dissolving
electronics
metals
silicon oxides
metal oxides
Dissolution
thin films
Silicon
Field effect transistors
water
Thin films
Oxides
conduction
Water
body fluids
corrosion
Body fluids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Yin, L., Cheng, H., Mao, S., Haasch, R., Liu, Y., Xie, X., ... Rogers, J. A. (2014). Dissolvable metals for transient electronics. Advanced Functional Materials, 24(5), 645-658. https://doi.org/10.1002/adfm.201301847
Yin, Lan ; Cheng, Huanyu ; Mao, Shimin ; Haasch, Richard ; Liu, Yuhao ; Xie, Xu ; Hwang, Suk Won ; Jain, Harshvardhan ; Kang, Seung Kyun ; Su, Yewang ; Li, Rui ; Huang, Yonggang ; Rogers, John A. / Dissolvable metals for transient electronics. In: Advanced Functional Materials. 2014 ; Vol. 24, No. 5. pp. 645-658.
@article{84f87b3799fb42b98bbe7580857c2cde,
title = "Dissolvable metals for transient electronics",
abstract = "Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically transient, electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. Effects of reactive dissolution on electrical conduction, morphological change, and chemical transformation of biodegradable metal thin films (Mg, Zn, W, Mo, and Fe) are studied, for application of these metals in water-soluble transient electronic devices. Feasibility of using these dissolvable metals as contacts for n-channel silicon metal oxide field effect transistors (MOSFETs) is also demonstrated.",
author = "Lan Yin and Huanyu Cheng and Shimin Mao and Richard Haasch and Yuhao Liu and Xu Xie and Hwang, {Suk Won} and Harshvardhan Jain and Kang, {Seung Kyun} and Yewang Su and Rui Li and Yonggang Huang and Rogers, {John A.}",
year = "2014",
month = "2",
day = "5",
doi = "10.1002/adfm.201301847",
language = "English (US)",
volume = "24",
pages = "645--658",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "5",

}

Yin, L, Cheng, H, Mao, S, Haasch, R, Liu, Y, Xie, X, Hwang, SW, Jain, H, Kang, SK, Su, Y, Li, R, Huang, Y & Rogers, JA 2014, 'Dissolvable metals for transient electronics', Advanced Functional Materials, vol. 24, no. 5, pp. 645-658. https://doi.org/10.1002/adfm.201301847

Dissolvable metals for transient electronics. / Yin, Lan; Cheng, Huanyu; Mao, Shimin; Haasch, Richard; Liu, Yuhao; Xie, Xu; Hwang, Suk Won; Jain, Harshvardhan; Kang, Seung Kyun; Su, Yewang; Li, Rui; Huang, Yonggang; Rogers, John A.

In: Advanced Functional Materials, Vol. 24, No. 5, 05.02.2014, p. 645-658.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dissolvable metals for transient electronics

AU - Yin, Lan

AU - Cheng, Huanyu

AU - Mao, Shimin

AU - Haasch, Richard

AU - Liu, Yuhao

AU - Xie, Xu

AU - Hwang, Suk Won

AU - Jain, Harshvardhan

AU - Kang, Seung Kyun

AU - Su, Yewang

AU - Li, Rui

AU - Huang, Yonggang

AU - Rogers, John A.

PY - 2014/2/5

Y1 - 2014/2/5

N2 - Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically transient, electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. Effects of reactive dissolution on electrical conduction, morphological change, and chemical transformation of biodegradable metal thin films (Mg, Zn, W, Mo, and Fe) are studied, for application of these metals in water-soluble transient electronic devices. Feasibility of using these dissolvable metals as contacts for n-channel silicon metal oxide field effect transistors (MOSFETs) is also demonstrated.

AB - Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically transient, electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics. Effects of reactive dissolution on electrical conduction, morphological change, and chemical transformation of biodegradable metal thin films (Mg, Zn, W, Mo, and Fe) are studied, for application of these metals in water-soluble transient electronic devices. Feasibility of using these dissolvable metals as contacts for n-channel silicon metal oxide field effect transistors (MOSFETs) is also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84895057255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84895057255&partnerID=8YFLogxK

U2 - 10.1002/adfm.201301847

DO - 10.1002/adfm.201301847

M3 - Article

VL - 24

SP - 645

EP - 658

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 5

ER -