Divacancies production in irradiated n-type silicon

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Abstract

Measurements of loss factor and capacitance made on single crystals of P-doped n-type silicon are reported. Samples are irradiated with (1.00 ± 0.20) MeV electrons at temperatures <12K. The production of divacancies in the irradiated samples is monitored using hopping conductivity changes at 4.2 K. Higher divacancy production is observed in Czochralski-grown samples and samples containing appreciable concentrations of group III impurities. This suggests that oxygen and group III impurities trap the self interstitials, mobile under irradiation conditions, thus, inhibiting divacancy-self-interstitials annihilation. Effects of irradiation on the free carriers conductivity of the samples are also investigated.

Original languageEnglish (US)
Pages (from-to)312-318
Number of pages7
JournalPhysica B+C
Volume150
Issue number3
DOIs
StatePublished - Jun 1988

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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