Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"

Tetsuya D. Mishima, Patrick M. Lenahan, Werner Weber

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

The electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our results suggest that the Pb1 correlation energy is smaller than that of the more widely studied (001) Si/SiO2 defect called Pb0.

Original languageEnglish (US)
Pages (from-to)3771-3773
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number25
DOIs
StatePublished - Jun 19 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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