Domain rearrangement in ferroelectric Bi4Ti3O12 thin films studied by in situ optical second harmonic generation

Yaniv Barad, James Lettieri, Chris D. Theis, Darrell G. Schlom, Venkatraman Gopalan

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Electric-field induced rearrangement of domain microstructure in an epitaxial thin film of Bi4Ti3O12 on a SrTiO3 (001) substrate is studied by optical second harmonic generation measurements. The input polarization dependence of the second harmonic signal exhibits spatial symmetries that reflect the presence of eight different domain variants present in the film. Changes in these symmetries with the application of electric field are experimentally studied at 23°C and 60°C, and theoretically modeled to extract the hysteresis loops that reflect quantitative changes in the fraction of domain variants. A strong correlation is observed between the dc electrical conductance (as distinct from transient currents) and the ferroelectric domain state of the film, which is proposed to arise from the creation and destruction of charged domain walls within the film with applied field.

Original languageEnglish (US)
Pages (from-to)3497-3503
Number of pages7
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Domain rearrangement in ferroelectric Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films studied by in situ optical second harmonic generation'. Together they form a unique fingerprint.

Cite this