Domain wall motion across various grain boundaries in ferroelectric thin films

Daniel M. Marincel, Huairuo Zhang, Stephen Jesse, Alex Belianinov, Mahmut B. Okatan, Sergei V. Kalinin, W. Mark Rainforth, Ian M. Reaney, Clive A. Randall, Susan Trolier-Mckinstry

Research output: Contribution to journalArticle

15 Scopus citations


Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10° tilt grain boundaries. The observed nonlinear response was correlated with the domain configurations imaged in cross section by transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)1848-1857
Number of pages10
JournalJournal of the American Ceramic Society
Issue number6
Publication statusPublished - Jun 1 2015


All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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