Dominating defects in the MOS system: P_band E’ centers

Engineering & Materials Science

• Silicon oxides 100%
• Dangling bonds 62%
• Defects 47%
• Metals 44%
• Paramagnetic resonance 37%
• Electronic properties 32%
• Silicon 27%
• Oxides 23%
• Electron spin resonance spectroscopy 14%
• Hafnium oxides 12%
• Point defects 10%
• Statistical mechanics 10%
• Spectroscopy 7%
• Silica 7%
• Nitrogen 6%
• Plasmas 6%

Chemical Compounds

• Dangling Bond 91%
• Metal Oxide 57%
• Electronic Property 34%
• Oxide 29%
• Deep Defect Level 25%
• Interface Trap 22%
• Statistical Mechanics 19%
• Crystal Point Defect 17%
• Silicon Dioxide 16%
• Hafnium Atom 16%
• Dielectric Material 12%
• EPR Spectroscopy 12%
• Nitrogen 8%
• Application 4%

Physics & Astronomy

• metal oxides 66%
• defects 38%
• silicon 37%
• electron paramagnetic resonance 31%
• traps 20%
• oxides 17%
• electrical measurement 13%
• electronics 10%
• trapping 10%
• hafnium oxides 9%
• borders 7%
• statistical mechanics 7%
• spectroscopy 7%
• point defects 6%
• silicon dioxide 5%
• nitrogen 5%