Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current

Sumeet Kumar Gupta, Jaydeep P. Kulkarni, Suman Datta, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (I OFF) to parameter variations (PV) and lower drain-induced barrier lowering/thinning (DIBL/T) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low I OFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages55-56
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Gupta, S. K., Kulkarni, J. P., Datta, S., & Roy, K. (2012). Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 55-56). [6257027] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6257027