Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current

Sumeet Kumar Gupta; Jaydeep P. Kulkarni; Suman Datta; Kaushik Roy

doi:10.1109/DRC.2012.6257027

Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current

Sumeet Kumar Gupta, Jaydeep P. Kulkarni, Suman Datta, Kaushik Roy

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (I _OFF) to parameter variations (PV) and lower drain-induced barrier lowering/thinning (DIBL/T) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low I _OFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	55-56
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6257027
State	Published - Oct 5 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2012.6257027

Cite this

Gupta, S. K., Kulkarni, J. P., Datta, S., & Roy, K. (2012). Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 55-56). [6257027] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6257027

@inproceedings{8f1aea591fa04d2cbdb17cef4ea9ed1d,

title = "Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current",

abstract = "We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (I OFF) to parameter variations (PV) and lower drain-induced barrier lowering/thinning (DIBL/T) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low I OFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.",

author = "Gupta, {Sumeet Kumar} and Kulkarni, {Jaydeep P.} and Suman Datta and Kaushik Roy",

year = "2012",

month = oct,

day = "5",

doi = "10.1109/DRC.2012.6257027",

language = "English (US)",

isbn = "9781467311618",

series = "Device Research Conference - Conference Digest, DRC",

pages = "55--56",

booktitle = "70th Device Research Conference, DRC 2012 - Conference Digest",

note = "70th Device Research Conference, DRC 2012 ; Conference date: 18-06-2012 Through 20-06-2012",

}

Gupta, SK, Kulkarni, JP, Datta, S & Roy, K 2012, Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6257027, Device Research Conference - Conference Digest, DRC, pp. 55-56, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6257027

Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current. / Gupta, Sumeet Kumar; Kulkarni, Jaydeep P.; Datta, Suman et al.

70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 55-56 6257027 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Gupta, Sumeet Kumar

AU - Kulkarni, Jaydeep P.

AU - Datta, Suman

AU - Roy, Kaushik

PY - 2012/10/5

Y1 - 2012/10/5

N2 - We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (I OFF) to parameter variations (PV) and lower drain-induced barrier lowering/thinning (DIBL/T) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low I OFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.

AB - We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (I OFF) to parameter variations (PV) and lower drain-induced barrier lowering/thinning (DIBL/T) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low I OFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.

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BT - 70th Device Research Conference, DRC 2012 - Conference Digest

T2 - 70th Device Research Conference, DRC 2012

Y2 - 18 June 2012 through 20 June 2012

ER -

Gupta SK, Kulkarni JP, Datta S, Roy K. Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current. In 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 55-56. 6257027. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2012.6257027

Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in off current

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