Doping effects of Sb and Pb in epitaxial topological insulator Bi 2 Se3 thin films: An in situ angle-resolved photoemission spectroscopy study

Yi Zhang, Cui Zu Chang, Ke He, Li Li Wang, Xi Chen, Jin Feng Jia, Xu Cun Ma, Qi Kun Xue

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Bi2 Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi 2 Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2 Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.

Original languageEnglish (US)
Article number194102
JournalApplied Physics Letters
Volume97
Issue number19
DOIs
StatePublished - Nov 8 2010

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photoelectric emission
insulators
thin films
spectroscopy
molecular beam epitaxy
electronic structure
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Bi2 Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi 2 Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2 Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.",
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Doping effects of Sb and Pb in epitaxial topological insulator Bi 2 Se3 thin films : An in situ angle-resolved photoemission spectroscopy study. / Zhang, Yi; Chang, Cui Zu; He, Ke; Wang, Li Li; Chen, Xi; Jia, Jin Feng; Ma, Xu Cun; Xue, Qi Kun.

In: Applied Physics Letters, Vol. 97, No. 19, 194102, 08.11.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Doping effects of Sb and Pb in epitaxial topological insulator Bi 2 Se3 thin films

T2 - An in situ angle-resolved photoemission spectroscopy study

AU - Zhang, Yi

AU - Chang, Cui Zu

AU - He, Ke

AU - Wang, Li Li

AU - Chen, Xi

AU - Jia, Jin Feng

AU - Ma, Xu Cun

AU - Xue, Qi Kun

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AB - Bi2 Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi 2 Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2 Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.

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