Doping of two-dimensional semiconductors: A rapid review and outlook

Kehao Zhang, Joshua Robinson

Research output: Contribution to journalReview articlepeer-review

Abstract

Doping, as a primary technique to modify semiconductor transport, has achieved tremendous success in the past decades. For example, boron and phosphorus doping of Si modulates the dominant carrier type between p-type and n-type, serving as the backbone for the modern microelectronic technologies. Doped III-V semiconducting systems exhibit phenomenal optoelectronic properties. Magnesium doped gallium nitride plays an important role to build efficient blue light-emitting diode (LED), which won Nobel Prize in physics in 2014. The rise of two-dimensional (2D) materials sheds light on their potential in next generation electronic, optoelectronic, and quantum applications. These properties can further be controlled via doping of 2D materials, however, many challenges still remain in this field. Here, we present a rapid review on the recent achievements and challenges in the metastable and substitutional doping of 2D materials, followed by providing an outlook on integrating 2D materials into more advanced electronic architectures.

Original languageEnglish (US)
Pages (from-to)2743-2757
Number of pages15
JournalMRS Advances
Volume4
Issue number51-52
DOIs
StatePublished - 2019

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

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