Double-gate ZnO TFT active rectifier

Kaige G. Sun, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Active rectifiers combine a high-gain amplifier (used as a comparator) and actively controlled switches to provide reduced turn-on voltage compared to p-n and Schottky diodes. Most reports of active rectifiers use silicon MOS transistor technology, however for some applications it is useful to combine active rectifiers with micro-electromechanical systems (MEMS) or to provide active rectifiers distributed over a large area. For such applications active rectifiers using thin film transistors (TFTs) are of interest. In this paper, we demonstrate a low-power full-wave active rectifier fabricated using double-gate ZnO TFTs. The double-gate TFT structure allows tuning of the device turn-on voltage and threshold voltage by biasing the top gate [1]. This simplifies fabrication of enhancement/depletion mode circuits and allows high gain inverter stages that operate at low power.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages269-270
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

Fingerprint

Thin film transistors
Gates (transistor)
Electric potential
MOSFET devices
Threshold voltage
MEMS
Diodes
Tuning
Switches
Fabrication
Silicon
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Sun, K. G., & Jackson, T. N. (2014). Double-gate ZnO TFT active rectifier. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 269-270). [6872401] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872401
Sun, Kaige G. ; Jackson, Thomas Nelson. / Double-gate ZnO TFT active rectifier. 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 269-270 (Device Research Conference - Conference Digest, DRC).
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Sun, KG & Jackson, TN 2014, Double-gate ZnO TFT active rectifier. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872401, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 269-270, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872401

Double-gate ZnO TFT active rectifier. / Sun, Kaige G.; Jackson, Thomas Nelson.

72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 269-270 6872401 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Sun KG, Jackson TN. Double-gate ZnO TFT active rectifier. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 269-270. 6872401. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2014.6872401