Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2: Quantum Oscillation Study

P. L. Cai, J. Hu, L. P. He, J. Pan, X. C. Hong, Z. Zhang, J. Zhang, J. Wei, Z. Q. Mao, S. Y. Li

Research output: Contribution to journalArticlepeer-review

103 Scopus citations

Abstract

The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25×105% under ambient pressure to 7.47×103% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2.

Original languageEnglish (US)
Article number057202
JournalPhysical review letters
Volume115
Issue number5
DOIs
StatePublished - Jul 28 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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