Drv etching of sol-gel pzt

R. Zeto, B. Rod, M. Dubey, M. Ervin, J. Conrad, R. Piekarz, Susan E. Trolier-McKinstry, T. Su, J. Shepard

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Abstract

Two techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2C1F4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on Pt/Ti/SiOa silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

Original languageEnglish (US)
Pages (from-to)159-164
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume546
StatePublished - Dec 1 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Zeto, R., Rod, B., Dubey, M., Ervin, M., Conrad, J., Piekarz, R., Trolier-McKinstry, S. E., Su, T., & Shepard, J. (1999). Drv etching of sol-gel pzt. Materials Research Society Symposium - Proceedings, 546, 159-164.