Dry cleaning procedure for silicon IC fabrication

Jerzy Ruzyllo, David C. Frystak, R. Allen Bowling

Research output: Contribution to journalArticle

12 Scopus citations


A complete, fully integrated dry wafer cleaning procedure based on remote plasma processing is introduced. Included are all the steps needed to prepare a resist coated wafer following a field oxide etch for further processing. Experimental results based on surface analysis and MOS electrical measurements demonstrate its adequate performance in pre-gate oxidation cleaning. The results obtained can be viewed as a promising step toward the development of dry wafer cleaning technology with a possibly wide range of applications in silicon IC fabrication.

Original languageEnglish (US)
Pages (from-to)409-412
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1990


All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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