Dry-developed organosilicon resists for 193-NM excimer laser lithography

R. R. Kunz, Mark William Horn

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

Irradiation of certain organosilicon polymers with a 193-nm excimer laser forms a latent image that contains increased amounts of oxygen. Patterning is achieved by dry development in an HBr plasma, where the oxidized polymer etches more slowly than the unexposed areas. With these polymers as the top layer in a bilayer resist scheme, 0.2 μm resolution has been demonstrated and resist sensitivities less than 50 mJ/cm2 have been achieved. Three classes of organosilicon layers have been investigated: polysilynes, polysilanes, in particular poly(phenylmethyl)silane, and a plasma-deposited polymer derived from tetramethylsilane (PPTMS). The PPTMS, when used with plasma-deposited planarizing layers, opens the possibility of an all-dry, cluster-tool-compatible lithographic cycle.

Original languageEnglish (US)
Pages291-300
Number of pages10
StatePublished - Dec 1 1991
Event9th International Technical Conference on Photopolymers - Ellenville, NY, USA
Duration: Oct 28 1991Oct 30 1991

Other

Other9th International Technical Conference on Photopolymers
CityEllenville, NY, USA
Period10/28/9110/30/91

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kunz, R. R., & Horn, M. W. (1991). Dry-developed organosilicon resists for 193-NM excimer laser lithography. 291-300. Paper presented at 9th International Technical Conference on Photopolymers, Ellenville, NY, USA, .