Dry development of sub-0.25 μm features patterned with 193 nm silylation resist

S. C. Palmateer, A. R. Forte, R. R. Kunz, Mark William Horn

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The dry development of sub-0.25 μm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 μm silylated resist features.

Original languageEnglish (US)
Pages (from-to)1132-1136
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number3
DOIs
StatePublished - Jan 1 1996

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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