Abstract
In this work, we propose dual mode ferroelectric transistors (D-FEFETs) that exhibit dynamic tuning of operation between volatile and non-volatile modes with the help of a control signal. We utilize the unique features of D-FEFET to design two variants of non-volatile flip-flops (NVFFs). In both designs, D-FEFETs are operated in the volatile mode for normal operations and in the non-volatile mode to backup the state of the flip-flop during a power outage. The first design comprises of a truly embedded non-volatile element (D-FEFET) which enables a fully automatic backup operation. In the second design, we introduce need-based backup, which lowers energy during normal operation at the cost of area with respect to the first design. Compared to a previously proposed FEFET based NVFF, the first design achieves 19% area reduction along with 96% lower backup energy and 9% lower restore energy, but at 14%-35% larger operation energy. The second design shows 11% lower area, 21% lower backup energy, 16% decrease in backup delay and similar operation energy but with a penalty of 17% and 19% in the restore energy and delay, respectively. System-level analysis of the proposed NVFFs in context of a state-of-the-art intermittently-powered system using real benchmarks yielded 5%-33% energy savings.
| Original language | English (US) |
|---|---|
| Title of host publication | ISLPED 2018 - Proceedings of the 2018 International Symposium on Low Power Electronics and Design |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781450357043 |
| DOIs | |
| State | Published - Jul 23 2018 |
| Event | 23rd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2018 - Bellevue, United States Duration: Jul 23 2018 → Jul 25 2018 |
Publication series
| Name | Proceedings of the International Symposium on Low Power Electronics and Design |
|---|---|
| ISSN (Print) | 1533-4678 |
Other
| Other | 23rd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2018 |
|---|---|
| Country | United States |
| City | Bellevue |
| Period | 7/23/18 → 7/25/18 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
}
Dual mode ferroelectric transistor based non-volatile flip-flops for intermittently-powered systems. / Thirumala, S. K.; Raha, A.; Jayakumar, H.; Ma, K.; Narayanan, V.; Raghunathan, V.; Gupta, S. K.
ISLPED 2018 - Proceedings of the 2018 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2018. a31 (Proceedings of the International Symposium on Low Power Electronics and Design).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Dual mode ferroelectric transistor based non-volatile flip-flops for intermittently-powered systems
AU - Thirumala, S. K.
AU - Raha, A.
AU - Jayakumar, H.
AU - Ma, K.
AU - Narayanan, V.
AU - Raghunathan, V.
AU - Gupta, S. K.
PY - 2018/7/23
Y1 - 2018/7/23
N2 - In this work, we propose dual mode ferroelectric transistors (D-FEFETs) that exhibit dynamic tuning of operation between volatile and non-volatile modes with the help of a control signal. We utilize the unique features of D-FEFET to design two variants of non-volatile flip-flops (NVFFs). In both designs, D-FEFETs are operated in the volatile mode for normal operations and in the non-volatile mode to backup the state of the flip-flop during a power outage. The first design comprises of a truly embedded non-volatile element (D-FEFET) which enables a fully automatic backup operation. In the second design, we introduce need-based backup, which lowers energy during normal operation at the cost of area with respect to the first design. Compared to a previously proposed FEFET based NVFF, the first design achieves 19% area reduction along with 96% lower backup energy and 9% lower restore energy, but at 14%-35% larger operation energy. The second design shows 11% lower area, 21% lower backup energy, 16% decrease in backup delay and similar operation energy but with a penalty of 17% and 19% in the restore energy and delay, respectively. System-level analysis of the proposed NVFFs in context of a state-of-the-art intermittently-powered system using real benchmarks yielded 5%-33% energy savings.
AB - In this work, we propose dual mode ferroelectric transistors (D-FEFETs) that exhibit dynamic tuning of operation between volatile and non-volatile modes with the help of a control signal. We utilize the unique features of D-FEFET to design two variants of non-volatile flip-flops (NVFFs). In both designs, D-FEFETs are operated in the volatile mode for normal operations and in the non-volatile mode to backup the state of the flip-flop during a power outage. The first design comprises of a truly embedded non-volatile element (D-FEFET) which enables a fully automatic backup operation. In the second design, we introduce need-based backup, which lowers energy during normal operation at the cost of area with respect to the first design. Compared to a previously proposed FEFET based NVFF, the first design achieves 19% area reduction along with 96% lower backup energy and 9% lower restore energy, but at 14%-35% larger operation energy. The second design shows 11% lower area, 21% lower backup energy, 16% decrease in backup delay and similar operation energy but with a penalty of 17% and 19% in the restore energy and delay, respectively. System-level analysis of the proposed NVFFs in context of a state-of-the-art intermittently-powered system using real benchmarks yielded 5%-33% energy savings.
UR - http://www.scopus.com/inward/record.url?scp=85051510758&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85051510758&partnerID=8YFLogxK
U2 - 10.1145/3218603.3218653
DO - 10.1145/3218603.3218653
M3 - Conference contribution
AN - SCOPUS:85051510758
SN - 9781450357043
T3 - Proceedings of the International Symposium on Low Power Electronics and Design
BT - ISLPED 2018 - Proceedings of the 2018 International Symposium on Low Power Electronics and Design
PB - Institute of Electrical and Electronics Engineers Inc.
ER -