Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Sarah M. Eichfeld, Dongjin Won, Kathy Trumbull, Michael Labella, Xiaojun Weng, Joshua Alexander Robinson, David W. Snyder, Joan Marie Redwing, Tanya Paskova, Kevin Udwary, Greg Mulholland, Ed Preble, Keith R. Evans

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of growth temperature and Mg compensation doping on the structural and electrical properties of AlGaN/AlN/GaN high electron mobility transistor (HEMTs) structures grown on low threading dislocation density bulk GaN substrates by metalorganic chemical vapor deposition were investigated. The background electron concentration in the regrown GaN was found to decrease from 1.5x1018 cm-3 to 2x1016 cm-3 as the growth temperature was reduced from 1100 °C to 950 °C. A dual temperature process was then employed for growth of the GaN base layer and AlGaN/AlN/GaN top heterostructure in the HEMT along with Mg doping of the GaN base to compensate residual Si donors at the regrown interface. Using this approach, AlGaN/AlN/GaN HEMTs were produced that had a sheet carrier density as high as 1.1x1013 cm-3 with a room temperature mobility of 1600 cm2/Vs. The incorporation of a thin AlN layer at the regrown interface was found to reduce the sheet carrier density of the overall structure.

Original languageEnglish (US)
Pages (from-to)2053-2055
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number7-8
DOIs
StatePublished - Jul 1 2011

Fingerprint

high electron mobility transistors
temperature compensation
metalorganic chemical vapor deposition
temperature
electrical properties
room temperature
electrons

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Eichfeld, Sarah M. ; Won, Dongjin ; Trumbull, Kathy ; Labella, Michael ; Weng, Xiaojun ; Robinson, Joshua Alexander ; Snyder, David W. ; Redwing, Joan Marie ; Paskova, Tanya ; Udwary, Kevin ; Mulholland, Greg ; Preble, Ed ; Evans, Keith R. / Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Vol. 8, No. 7-8. pp. 2053-2055.
@article{94a7331fe8924b1fa5f1e1aeb958c5a7,
title = "Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates",
abstract = "The effects of growth temperature and Mg compensation doping on the structural and electrical properties of AlGaN/AlN/GaN high electron mobility transistor (HEMTs) structures grown on low threading dislocation density bulk GaN substrates by metalorganic chemical vapor deposition were investigated. The background electron concentration in the regrown GaN was found to decrease from 1.5x1018 cm-3 to 2x1016 cm-3 as the growth temperature was reduced from 1100 °C to 950 °C. A dual temperature process was then employed for growth of the GaN base layer and AlGaN/AlN/GaN top heterostructure in the HEMT along with Mg doping of the GaN base to compensate residual Si donors at the regrown interface. Using this approach, AlGaN/AlN/GaN HEMTs were produced that had a sheet carrier density as high as 1.1x1013 cm-3 with a room temperature mobility of 1600 cm2/Vs. The incorporation of a thin AlN layer at the regrown interface was found to reduce the sheet carrier density of the overall structure.",
author = "Eichfeld, {Sarah M.} and Dongjin Won and Kathy Trumbull and Michael Labella and Xiaojun Weng and Robinson, {Joshua Alexander} and Snyder, {David W.} and Redwing, {Joan Marie} and Tanya Paskova and Kevin Udwary and Greg Mulholland and Ed Preble and Evans, {Keith R.}",
year = "2011",
month = "7",
day = "1",
doi = "10.1002/pssc.201001059",
language = "English (US)",
volume = "8",
pages = "2053--2055",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "7-8",

}

Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates. / Eichfeld, Sarah M.; Won, Dongjin; Trumbull, Kathy; Labella, Michael; Weng, Xiaojun; Robinson, Joshua Alexander; Snyder, David W.; Redwing, Joan Marie; Paskova, Tanya; Udwary, Kevin; Mulholland, Greg; Preble, Ed; Evans, Keith R.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 7-8, 01.07.2011, p. 2053-2055.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

AU - Eichfeld, Sarah M.

AU - Won, Dongjin

AU - Trumbull, Kathy

AU - Labella, Michael

AU - Weng, Xiaojun

AU - Robinson, Joshua Alexander

AU - Snyder, David W.

AU - Redwing, Joan Marie

AU - Paskova, Tanya

AU - Udwary, Kevin

AU - Mulholland, Greg

AU - Preble, Ed

AU - Evans, Keith R.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - The effects of growth temperature and Mg compensation doping on the structural and electrical properties of AlGaN/AlN/GaN high electron mobility transistor (HEMTs) structures grown on low threading dislocation density bulk GaN substrates by metalorganic chemical vapor deposition were investigated. The background electron concentration in the regrown GaN was found to decrease from 1.5x1018 cm-3 to 2x1016 cm-3 as the growth temperature was reduced from 1100 °C to 950 °C. A dual temperature process was then employed for growth of the GaN base layer and AlGaN/AlN/GaN top heterostructure in the HEMT along with Mg doping of the GaN base to compensate residual Si donors at the regrown interface. Using this approach, AlGaN/AlN/GaN HEMTs were produced that had a sheet carrier density as high as 1.1x1013 cm-3 with a room temperature mobility of 1600 cm2/Vs. The incorporation of a thin AlN layer at the regrown interface was found to reduce the sheet carrier density of the overall structure.

AB - The effects of growth temperature and Mg compensation doping on the structural and electrical properties of AlGaN/AlN/GaN high electron mobility transistor (HEMTs) structures grown on low threading dislocation density bulk GaN substrates by metalorganic chemical vapor deposition were investigated. The background electron concentration in the regrown GaN was found to decrease from 1.5x1018 cm-3 to 2x1016 cm-3 as the growth temperature was reduced from 1100 °C to 950 °C. A dual temperature process was then employed for growth of the GaN base layer and AlGaN/AlN/GaN top heterostructure in the HEMT along with Mg doping of the GaN base to compensate residual Si donors at the regrown interface. Using this approach, AlGaN/AlN/GaN HEMTs were produced that had a sheet carrier density as high as 1.1x1013 cm-3 with a room temperature mobility of 1600 cm2/Vs. The incorporation of a thin AlN layer at the regrown interface was found to reduce the sheet carrier density of the overall structure.

UR - http://www.scopus.com/inward/record.url?scp=79960718454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960718454&partnerID=8YFLogxK

U2 - 10.1002/pssc.201001059

DO - 10.1002/pssc.201001059

M3 - Article

AN - SCOPUS:79960718454

VL - 8

SP - 2053

EP - 2055

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 7-8

ER -