Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

Sarah M. Eichfeld, Dongjin Won, Kathy Trumbull, Michael Labella, Xiaojun Weng, Joshua Alexander Robinson, David W. Snyder, Joan Marie Redwing, Tanya Paskova, Kevin Udwary, Greg Mulholland, Ed Preble, Keith R. Evans

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Physics & Astronomy