Dynamic analysis of inverter based on high voltage GaN high electron mobility transistor

Yajing Zhang, Trillion Q. Zheng, Yan Li

Research output: Contribution to journalArticle

Abstract

In recent years with the rapid development of the manufacturing process of GaN devices, gallium nitride high electron mobility transistor (GAN HEMT) has begun to apply in the field of power electronics. GaN HEMT has the characteristics of low parasitic parameters, no reverse recovery losses and high speed, which will reduce the switching losses of the device. Taken the 600V GaN HEMT as an example,this paper studied the switch dynamic process and the effects of parasitic caused by the cascode structure of the switch. This paper established a 600V GaN HEMT equivalent model, as well as derived the dynamic processes under four cases in a single phase inverter. The four cases are positive switch conduction, the forward turn off, reverse freewheeling turn on and reverse wheeling turn off. The equivalent circuit of GaN HEMT considers the parasitic inductance that has great impacts on the switching process and the switching loss. The effects of the parasitic parameters are identified and verified by simulation and experiment results. Lint1, Lint3 and LS directly affect the dynamic process of the switch and further affect the switching losses of the switch.

Original languageEnglish (US)
Pages (from-to)126-134
Number of pages9
JournalDiangong Jishu Xuebao/Transactions of China Electrotechnical Society
Volume31
Issue number12
StatePublished - Jun 25 2016

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High electron mobility transistors
Dynamic analysis
Switches
Electric potential
Gallium nitride
Power electronics
Equivalent circuits
Inductance
Recovery
Experiments

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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title = "Dynamic analysis of inverter based on high voltage GaN high electron mobility transistor",
abstract = "In recent years with the rapid development of the manufacturing process of GaN devices, gallium nitride high electron mobility transistor (GAN HEMT) has begun to apply in the field of power electronics. GaN HEMT has the characteristics of low parasitic parameters, no reverse recovery losses and high speed, which will reduce the switching losses of the device. Taken the 600V GaN HEMT as an example,this paper studied the switch dynamic process and the effects of parasitic caused by the cascode structure of the switch. This paper established a 600V GaN HEMT equivalent model, as well as derived the dynamic processes under four cases in a single phase inverter. The four cases are positive switch conduction, the forward turn off, reverse freewheeling turn on and reverse wheeling turn off. The equivalent circuit of GaN HEMT considers the parasitic inductance that has great impacts on the switching process and the switching loss. The effects of the parasitic parameters are identified and verified by simulation and experiment results. Lint1, Lint3 and LS directly affect the dynamic process of the switch and further affect the switching losses of the switch.",
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Dynamic analysis of inverter based on high voltage GaN high electron mobility transistor. / Zhang, Yajing; Zheng, Trillion Q.; Li, Yan.

In: Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, Vol. 31, No. 12, 25.06.2016, p. 126-134.

Research output: Contribution to journalArticle

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