Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Yih Wang, Eric Karl, Mesut Meterelliyoz, Fatih Hamzaoglu, Yong Gee Ng, Swaroop Ghosh, Liqiong Wei, Uddalak Bhattacharya, Kevin Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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