Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature

Ya Gao, Jia Mian Hu, C. T. Nelson, T. N. Yang, Y. Shen, L. Q. Chen, R. Ramesh, C. W. Nan

Research output: Contribution to journalArticle

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Abstract

Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential for the development of spintronic devices with a minimum amount of power consumption. Substantial progress has been made in this subject especially on magnetic/ferroelectric heterostructures. Here, we report the in situ observation of such phenomenon in a NiFe thin film grown directly on a rhombohedral Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) ferroelectric crystal. Under a cyclic voltage applied perpendicular to the PMN-PT without a magnetic field, the local magnetization of NiFe can be repetitively reversed through an out-of-plane excursion and then back into the plane. Using phase field simulations we interpret magnetization reversal as a synergistic effect of the metastable ferroelastic switching in the PMN-PT and an electrically rotatable local exchange bias field arising from the heterogeneously distributed NiO clusters at the interface.

Original languageEnglish (US)
Article number23696
JournalScientific reports
Volume6
DOIs
StatePublished - Mar 31 2016

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Magnetic Fields
Observation
Equipment and Supplies
Temperature

All Science Journal Classification (ASJC) codes

  • General

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Gao, Ya ; Hu, Jia Mian ; Nelson, C. T. ; Yang, T. N. ; Shen, Y. ; Chen, L. Q. ; Ramesh, R. ; Nan, C. W. / Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature. In: Scientific reports. 2016 ; Vol. 6.
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Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature. / Gao, Ya; Hu, Jia Mian; Nelson, C. T.; Yang, T. N.; Shen, Y.; Chen, L. Q.; Ramesh, R.; Nan, C. W.

In: Scientific reports, Vol. 6, 23696, 31.03.2016.

Research output: Contribution to journalArticle

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AU - Gao, Ya

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