TY - JOUR
T1 - Dynamic scaling of internal bias field in Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.34PbTiO3 ferroelectric ceramic
AU - Qi, Xudong
AU - Sun, Enwei
AU - Li, Shiyang
AU - Lü, Weiming
AU - Zhang, Rui
AU - Yang, Bin
AU - Cao, Wenwu
N1 - Funding Information:
This research was supported in part by the NSFC under Grant Nos. 51575344, 11304061, 51602080, and 51572056, the National Key Basic Research Program of China (973 Program) under Grant No. 2013CB632900.
Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/9/1
Y1 - 2018/9/1
N2 - The influences of temperature, electric field, and frequency on the internal bias field Ei have been investigated in poled and aged Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.34PbTiO3 ferroelectric ceramic. It was found that Ei decreases with temperature T and electric field amplitude E0, but increases with frequency f. The relaxation behavior of the internal bias field is related to the redistribution of preferentially oriented defect dipoles. Based on our results, scaling relations of Ei on temperature, electric field, and frequency were established in both rhombohedral and tetragonal phases, which provide the foundation for making “harder” piezoelectric materials through point defect engineering in order to meet the demand of high-power piezoelectric device applications.
AB - The influences of temperature, electric field, and frequency on the internal bias field Ei have been investigated in poled and aged Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.42Pb(Mg1/3Nb2/3)O3–0.34PbTiO3 ferroelectric ceramic. It was found that Ei decreases with temperature T and electric field amplitude E0, but increases with frequency f. The relaxation behavior of the internal bias field is related to the redistribution of preferentially oriented defect dipoles. Based on our results, scaling relations of Ei on temperature, electric field, and frequency were established in both rhombohedral and tetragonal phases, which provide the foundation for making “harder” piezoelectric materials through point defect engineering in order to meet the demand of high-power piezoelectric device applications.
UR - http://www.scopus.com/inward/record.url?scp=85048662060&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048662060&partnerID=8YFLogxK
U2 - 10.1007/s10853-018-2586-8
DO - 10.1007/s10853-018-2586-8
M3 - Article
AN - SCOPUS:85048662060
VL - 53
SP - 12762
EP - 12769
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 18
ER -