Dynamics of microscale thin film AlN piezoelectric resonators enables low phase noise UHF frequency sources

Gianluca Piazza, Augusto Tazzoli, Nicholas Miller, Jeronimo Segovia, Cristian Cassella, Jabeom Koo, Brian Otis, Kamala McNaul, Brian Gibson, Kimberly Turner, Todd Palmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Miniaturized, multi-band and high frequency oscillators that are compatible with CMOS processes are highly desirable for the synthesis of compact, stable, and low power frequency sources for reconfigurable radio frequency communication systems and cognitive radios. Aluminum nitride (AlN) contour mode MEMS resonators (CMR) are emerging devices capable of high Q, low impedance, and multi-frequency operation on a single chip. The frequency stability of these AlN MEMS devices is of primary importance in delivering oscillators that exhibit low phase noise, and low sensitivity to temperature and acceleration. In this article we describe how the resonator dynamics impacts oscillator performance and present some preliminary demonstrations of ultra-high-frequency (UHF) oscillators. An example of an oscillator prototype we synthesized with a 586 MHz AlN CMR exhibited phase noise < - 91 dBc/Hz and - 160 dBc/Hz at 1 kHz and 10 MHz offsets, temperature stability of 2 ppm from - 20 to + 85 C, and acceleration sensitivity < 30 ppb/G.

Original languageEnglish (US)
Title of host publication2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013
Pages555-558
Number of pages4
DOIs
StatePublished - Dec 1 2013
Event2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 - Prague, Czech Republic
Duration: Jul 21 2013Jul 25 2013

Publication series

Name2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013

Other

Other2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013
CountryCzech Republic
CityPrague
Period7/21/137/25/13

Fingerprint

Aluminum nitride
Phase noise
MEMS
Resonators
Thin films
Frequency stability
Cognitive radio
Communication systems
Demonstrations
Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering

Cite this

Piazza, G., Tazzoli, A., Miller, N., Segovia, J., Cassella, C., Koo, J., ... Palmer, T. (2013). Dynamics of microscale thin film AlN piezoelectric resonators enables low phase noise UHF frequency sources. In 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013 (pp. 555-558). [6702291] (2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013). https://doi.org/10.1109/EFTF-IFC.2013.6702291
Piazza, Gianluca ; Tazzoli, Augusto ; Miller, Nicholas ; Segovia, Jeronimo ; Cassella, Cristian ; Koo, Jabeom ; Otis, Brian ; McNaul, Kamala ; Gibson, Brian ; Turner, Kimberly ; Palmer, Todd. / Dynamics of microscale thin film AlN piezoelectric resonators enables low phase noise UHF frequency sources. 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013. 2013. pp. 555-558 (2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013).
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Piazza, G, Tazzoli, A, Miller, N, Segovia, J, Cassella, C, Koo, J, Otis, B, McNaul, K, Gibson, B, Turner, K & Palmer, T 2013, Dynamics of microscale thin film AlN piezoelectric resonators enables low phase noise UHF frequency sources. in 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013., 6702291, 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013, pp. 555-558, 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013, Prague, Czech Republic, 7/21/13. https://doi.org/10.1109/EFTF-IFC.2013.6702291

Dynamics of microscale thin film AlN piezoelectric resonators enables low phase noise UHF frequency sources. / Piazza, Gianluca; Tazzoli, Augusto; Miller, Nicholas; Segovia, Jeronimo; Cassella, Cristian; Koo, Jabeom; Otis, Brian; McNaul, Kamala; Gibson, Brian; Turner, Kimberly; Palmer, Todd.

2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013. 2013. p. 555-558 6702291 (2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Miller, Nicholas

AU - Segovia, Jeronimo

AU - Cassella, Cristian

AU - Koo, Jabeom

AU - Otis, Brian

AU - McNaul, Kamala

AU - Gibson, Brian

AU - Turner, Kimberly

AU - Palmer, Todd

PY - 2013/12/1

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N2 - Miniaturized, multi-band and high frequency oscillators that are compatible with CMOS processes are highly desirable for the synthesis of compact, stable, and low power frequency sources for reconfigurable radio frequency communication systems and cognitive radios. Aluminum nitride (AlN) contour mode MEMS resonators (CMR) are emerging devices capable of high Q, low impedance, and multi-frequency operation on a single chip. The frequency stability of these AlN MEMS devices is of primary importance in delivering oscillators that exhibit low phase noise, and low sensitivity to temperature and acceleration. In this article we describe how the resonator dynamics impacts oscillator performance and present some preliminary demonstrations of ultra-high-frequency (UHF) oscillators. An example of an oscillator prototype we synthesized with a 586 MHz AlN CMR exhibited phase noise < - 91 dBc/Hz and - 160 dBc/Hz at 1 kHz and 10 MHz offsets, temperature stability of 2 ppm from - 20 to + 85 C, and acceleration sensitivity < 30 ppb/G.

AB - Miniaturized, multi-band and high frequency oscillators that are compatible with CMOS processes are highly desirable for the synthesis of compact, stable, and low power frequency sources for reconfigurable radio frequency communication systems and cognitive radios. Aluminum nitride (AlN) contour mode MEMS resonators (CMR) are emerging devices capable of high Q, low impedance, and multi-frequency operation on a single chip. The frequency stability of these AlN MEMS devices is of primary importance in delivering oscillators that exhibit low phase noise, and low sensitivity to temperature and acceleration. In this article we describe how the resonator dynamics impacts oscillator performance and present some preliminary demonstrations of ultra-high-frequency (UHF) oscillators. An example of an oscillator prototype we synthesized with a 586 MHz AlN CMR exhibited phase noise < - 91 dBc/Hz and - 160 dBc/Hz at 1 kHz and 10 MHz offsets, temperature stability of 2 ppm from - 20 to + 85 C, and acceleration sensitivity < 30 ppb/G.

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BT - 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013

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Piazza G, Tazzoli A, Miller N, Segovia J, Cassella C, Koo J et al. Dynamics of microscale thin film AlN piezoelectric resonators enables low phase noise UHF frequency sources. In 2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013. 2013. p. 555-558. 6702291. (2013 Joint European Frequency and Time Forum and International Frequency Control Symposium, EFTF/IFC 2013). https://doi.org/10.1109/EFTF-IFC.2013.6702291