TY - JOUR
T1 - Dynamics of voltage-driven oscillating insulator-metal transitions
AU - Shi, Yin
AU - Duwel, Amy E.
AU - Callahan, Dennis M.
AU - Sun, Yifei
AU - Hong, F. Anika
AU - Padmanabhan, Hari
AU - Gopalan, Venkatraman
AU - Engel-Herbert, Roman
AU - Ramanathan, Shriram
AU - Chen, Long Qing
N1 - Funding Information:
The theoretical and computational effort of this work was supported as part of the Computational Materials Sciences Program funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DE-SC0020145. The experimental effort on oscillator devices was supported by ONR N00014-16-1-2398.
Publisher Copyright:
© 2021 American Physical Society.
PY - 2021/8/1
Y1 - 2021/8/1
N2 - Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. We derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.
AB - Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. We derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.
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U2 - 10.1103/PhysRevB.104.064308
DO - 10.1103/PhysRevB.104.064308
M3 - Article
AN - SCOPUS:85113779789
VL - 104
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 2469-9950
IS - 6
M1 - 064308
ER -