Dynamics of voltage-driven oscillating insulator-metal transitions

Yin Shi, Amy E. Duwel, Dennis M. Callahan, Yifei Sun, F. Anika Hong, Hari Padmanabhan, Venkatraman Gopalan, Roman Engel-Herbert, Shriram Ramanathan, Long Qing Chen

Research output: Contribution to journalArticlepeer-review

Abstract

Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. We derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.

Original languageEnglish (US)
Article number064308
JournalPhysical Review B
Volume104
Issue number6
DOIs
StatePublished - Aug 1 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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