E′ centers and leakage currents in the gate oxides of metal oxide silicon devices

Patrick M. Lenahan, J. J. Mele

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The generation of electrically neutral E′ centers was studied. It was found that the generation of these centers is accompanied by a large monotonic increase in leakage currents and that the disappearance of these centers is accompanied by a monotonic decrease in leakage currents. Overall, the results indicate an important role for E′ centers in stress induced leakage currents.

Original languageEnglish (US)
Pages (from-to)2169-2173
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number4
DOIs
StatePublished - Jul 1 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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