ECR hydrogen plasma treatment of Si: defect activation under thermal anneal

C. W. Nam, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450 °C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500 °C and drop substantially beyond 750 °C.

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Pages565-567
Number of pages3
StatePublished - 1995
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 24 1995Oct 28 1995

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/24/9510/28/95

Fingerprint

Chemical activation
Plasmas
Hydrogen
Defects
Deep level transient spectroscopy
Electron cyclotron resonance
Temperature
Hydrogenation
Paramagnetic resonance
Cleaning
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Nam, C. W., & Ashok, S. (1995). ECR hydrogen plasma treatment of Si: defect activation under thermal anneal. In International Conference on Solid-State and Integrated Circuit Technology Proceedings (pp. 565-567)
Nam, C. W. ; Ashok, S. / ECR hydrogen plasma treatment of Si : defect activation under thermal anneal. International Conference on Solid-State and Integrated Circuit Technology Proceedings. 1995. pp. 565-567
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Nam, CW & Ashok, S 1995, ECR hydrogen plasma treatment of Si: defect activation under thermal anneal. in International Conference on Solid-State and Integrated Circuit Technology Proceedings. pp. 565-567, Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, 10/24/95.

ECR hydrogen plasma treatment of Si : defect activation under thermal anneal. / Nam, C. W.; Ashok, S.

International Conference on Solid-State and Integrated Circuit Technology Proceedings. 1995. p. 565-567.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Nam CW, Ashok S. ECR hydrogen plasma treatment of Si: defect activation under thermal anneal. In International Conference on Solid-State and Integrated Circuit Technology Proceedings. 1995. p. 565-567