Abstract
Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450 °C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500 °C and drop substantially beyond 750 °C.
| Original language | English (US) |
|---|---|
| Title of host publication | International Conference on Solid-State and Integrated Circuit Technology Proceedings |
| Pages | 565-567 |
| Number of pages | 3 |
| State | Published - 1995 |
| Event | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: Oct 24 1995 → Oct 28 1995 |
Other
| Other | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| City | Beijing, China |
| Period | 10/24/95 → 10/28/95 |
All Science Journal Classification (ASJC) codes
- Engineering(all)