ECR hydrogen plasma treatment of Si: defect activation under thermal anneal

C. W. Nam, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450 °C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500 °C and drop substantially beyond 750 °C.

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Pages565-567
Number of pages3
StatePublished - 1995
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 24 1995Oct 28 1995

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/24/9510/28/95

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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