ECR hydrogen plasma treatment of Si: defect activation under thermal anneal

C. W. Nam, S. Ashok

Research output: Contribution to journalArticle

Abstract

Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750°C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

Original languageEnglish (US)
Pages (from-to)365-370
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume378
StatePublished - 1995

Fingerprint

hydrogen plasma
Hydrogen
Chemical activation
activation
Plasmas
Defects
defects
Deep level transient spectroscopy
majority carriers
Electron cyclotron resonance
Silicon
electron cyclotron resonance
Schottky diodes
Temperature
cleaning
Hydrogenation
hydrogenation
Paramagnetic resonance
Cleaning
Diodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

@article{3017480fdb794d72b4e27dfdd232f283,
title = "ECR hydrogen plasma treatment of Si: defect activation under thermal anneal",
abstract = "Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750°C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.",
author = "Nam, {C. W.} and S. Ashok",
year = "1995",
language = "English (US)",
volume = "378",
pages = "365--370",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

ECR hydrogen plasma treatment of Si : defect activation under thermal anneal. / Nam, C. W.; Ashok, S.

In: Materials Research Society Symposium - Proceedings, Vol. 378, 1995, p. 365-370.

Research output: Contribution to journalArticle

TY - JOUR

T1 - ECR hydrogen plasma treatment of Si

T2 - defect activation under thermal anneal

AU - Nam, C. W.

AU - Ashok, S.

PY - 1995

Y1 - 1995

N2 - Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750°C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

AB - Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750°C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450°C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

UR - http://www.scopus.com/inward/record.url?scp=0029510739&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029510739&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029510739

VL - 378

SP - 365

EP - 370

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -