EDMR and EPR studies of 4H SiC MOSFETs and capacitors

C. J. Cochrane, B. C. Bittel, Patrick M. Lenahan, J. Fronheiser, K. Matocha, A. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages527-530
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
StatePublished - Jan 1 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cochrane, C. J., Bittel, B. C., Lenahan, P. M., Fronheiser, J., Matocha, K., & Lelis, A. (2010). EDMR and EPR studies of 4H SiC MOSFETs and capacitors. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 527-530). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.527