Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

Yi Pei, R. Chu, L. Shen, N. A. Fichtenbaum, Z. Chen, D. Brown, S. Keller, S. P. Denbaars, U. K. Mishra

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

Original languageEnglish (US)
Pages (from-to)300-302
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number4
DOIs
StatePublished - Apr 1 2008

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High electron mobility transistors
Density of gases
Electron gas
Leakage (fluid)
Chemical analysis
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Pei, Yi ; Chu, R. ; Shen, L. ; Fichtenbaum, N. A. ; Chen, Z. ; Brown, D. ; Keller, S. ; Denbaars, S. P. ; Mishra, U. K. / Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 4. pp. 300-302.
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abstract = "AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.",
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Pei, Y, Chu, R, Shen, L, Fichtenbaum, NA, Chen, Z, Brown, D, Keller, S, Denbaars, SP & Mishra, UK 2008, 'Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors', IEEE Electron Device Letters, vol. 29, no. 4, pp. 300-302. https://doi.org/10.1109/LED.2008.917936

Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors. / Pei, Yi; Chu, R.; Shen, L.; Fichtenbaum, N. A.; Chen, Z.; Brown, D.; Keller, S.; Denbaars, S. P.; Mishra, U. K.

In: IEEE Electron Device Letters, Vol. 29, No. 4, 01.04.2008, p. 300-302.

Research output: Contribution to journalArticle

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T1 - Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

AU - Pei, Yi

AU - Chu, R.

AU - Shen, L.

AU - Fichtenbaum, N. A.

AU - Chen, Z.

AU - Brown, D.

AU - Keller, S.

AU - Denbaars, S. P.

AU - Mishra, U. K.

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AB - AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

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