Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

Yi Pei, R. Chu, L. Shen, N. A. Fichtenbaum, Z. Chen, D. Brown, S. Keller, S. P. Denbaars, U. K. Mishra

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

Original languageEnglish (US)
Pages (from-to)300-302
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number4
DOIs
StatePublished - Apr 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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