Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si

Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, Joan Marie Redwing

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

Thin (∼10 nm) AlN interlayers have previously been used to mitigate stress and cracking in GaN epitaxial layers grown on Si substrates. However, multiple AlN interlayers are typically required for the growth of thick (>1 μm) GaN as the initial compressive mismatch stress introduced by the AlN interlayer transitions to a tensile stress within 0.5 μm. To better understand the reasons for the transition, in situ monitoring and transmission electron microscopy have been used to study stress and structural evolution in undoped GaN layers deposited on high temperature (1050-1100 °C) AlN interlayers by metal-organic chemical-vapor deposition. The results show that transition of the initial compressive stress to a final tensile stress is associated with a reduction in the density of dislocations introduced either by the pseudosubstrate or the interlayer itself.

Original languageEnglish (US)
Article number142101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number14
DOIs
StatePublished - Oct 3 2005

Fingerprint

interlayers
tensile stress
metalorganic chemical vapor deposition
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Raghavan, Srinivasan ; Weng, Xiaojun ; Dickey, Elizabeth ; Redwing, Joan Marie. / Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si. In: Applied Physics Letters. 2005 ; Vol. 87, No. 14. pp. 1-3.
@article{43e2d36c792d4173b52859d1b624aabf,
title = "Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si",
abstract = "Thin (∼10 nm) AlN interlayers have previously been used to mitigate stress and cracking in GaN epitaxial layers grown on Si substrates. However, multiple AlN interlayers are typically required for the growth of thick (>1 μm) GaN as the initial compressive mismatch stress introduced by the AlN interlayer transitions to a tensile stress within 0.5 μm. To better understand the reasons for the transition, in situ monitoring and transmission electron microscopy have been used to study stress and structural evolution in undoped GaN layers deposited on high temperature (1050-1100 °C) AlN interlayers by metal-organic chemical-vapor deposition. The results show that transition of the initial compressive stress to a final tensile stress is associated with a reduction in the density of dislocations introduced either by the pseudosubstrate or the interlayer itself.",
author = "Srinivasan Raghavan and Xiaojun Weng and Elizabeth Dickey and Redwing, {Joan Marie}",
year = "2005",
month = "10",
day = "3",
doi = "10.1063/1.2081128",
language = "English (US)",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si. / Raghavan, Srinivasan; Weng, Xiaojun; Dickey, Elizabeth; Redwing, Joan Marie.

In: Applied Physics Letters, Vol. 87, No. 14, 142101, 03.10.2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si

AU - Raghavan, Srinivasan

AU - Weng, Xiaojun

AU - Dickey, Elizabeth

AU - Redwing, Joan Marie

PY - 2005/10/3

Y1 - 2005/10/3

N2 - Thin (∼10 nm) AlN interlayers have previously been used to mitigate stress and cracking in GaN epitaxial layers grown on Si substrates. However, multiple AlN interlayers are typically required for the growth of thick (>1 μm) GaN as the initial compressive mismatch stress introduced by the AlN interlayer transitions to a tensile stress within 0.5 μm. To better understand the reasons for the transition, in situ monitoring and transmission electron microscopy have been used to study stress and structural evolution in undoped GaN layers deposited on high temperature (1050-1100 °C) AlN interlayers by metal-organic chemical-vapor deposition. The results show that transition of the initial compressive stress to a final tensile stress is associated with a reduction in the density of dislocations introduced either by the pseudosubstrate or the interlayer itself.

AB - Thin (∼10 nm) AlN interlayers have previously been used to mitigate stress and cracking in GaN epitaxial layers grown on Si substrates. However, multiple AlN interlayers are typically required for the growth of thick (>1 μm) GaN as the initial compressive mismatch stress introduced by the AlN interlayer transitions to a tensile stress within 0.5 μm. To better understand the reasons for the transition, in situ monitoring and transmission electron microscopy have been used to study stress and structural evolution in undoped GaN layers deposited on high temperature (1050-1100 °C) AlN interlayers by metal-organic chemical-vapor deposition. The results show that transition of the initial compressive stress to a final tensile stress is associated with a reduction in the density of dislocations introduced either by the pseudosubstrate or the interlayer itself.

UR - http://www.scopus.com/inward/record.url?scp=28344440861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344440861&partnerID=8YFLogxK

U2 - 10.1063/1.2081128

DO - 10.1063/1.2081128

M3 - Article

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142101

ER -