Effect of annealing on the band alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65

Chaker Fares, Zahabul Islam, Aman Haque, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S. J. Pearton

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Abstract

Heterostructures of Atomic Layer Deposited SiO2 on thin layers of (AlxGa1-x)2O3 with x = 0.2 - 0.65 deposited by Pulsed Laser Deposition were annealed at 600°C to simulate ohmic contact formation in MOS devices. The valence band offsets decrease significantly as a result of this annealing, with the change dependent on the initial Al composition. The decrease ranges from 0.65 eV for (Al0.20Ga0.80)2O3 to 1.75 eV for (Al0.65Ga0.35)2O3 and is likely due to an increase in interfacial disorder as a result of annealing. Concurrently, the conduction band offsets increase, improving carrier confinement for electrons within the heterostructure. The band alignment remains type I (nested gap) across the entire composition range examined.

Original languageEnglish (US)
Pages (from-to)P751-P756
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number12
DOIs
StatePublished - Jan 1 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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