Effect of annealing on the band alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65

Chaker Fares; Zahabul Islam; Aman Haque; Max Kneiß; Holger Von Wenckstern; Marius Grundmann; Marko Tadjer; Fan Ren; S. J. Pearton

doi:10.1149/2.0251911jss

Effect of annealing on the band alignment of ALD SiO₂ on (Al_xGa_1-x)₂O₃ for x = 0.2 - 0.65

Chaker Fares, Zahabul Islam, Aman Haque, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S. J. Pearton

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Abstract

Heterostructures of Atomic Layer Deposited SiO₂ on thin layers of (Al_xGa_1-x)₂O₃ with x = 0.2 - 0.65 deposited by Pulsed Laser Deposition were annealed at 600°C to simulate ohmic contact formation in MOS devices. The valence band offsets decrease significantly as a result of this annealing, with the change dependent on the initial Al composition. The decrease ranges from 0.65 eV for (Al0.20Ga0.80)₂O₃ to 1.75 eV for (Al0.65Ga0.35)₂O₃ and is likely due to an increase in interfacial disorder as a result of annealing. Concurrently, the conduction band offsets increase, improving carrier confinement for electrons within the heterostructure. The band alignment remains type I (nested gap) across the entire composition range examined.

Original language	English (US)
Pages (from-to)	P751-P756
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/2.0251911jss
State	Published - 2019

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0251911jss

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@article{73578a5cf84e4866bc0d41b5a69b19c3,

title = "Effect of annealing on the band alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65",

abstract = "Heterostructures of Atomic Layer Deposited SiO2 on thin layers of (AlxGa1-x)2O3 with x = 0.2 - 0.65 deposited by Pulsed Laser Deposition were annealed at 600°C to simulate ohmic contact formation in MOS devices. The valence band offsets decrease significantly as a result of this annealing, with the change dependent on the initial Al composition. The decrease ranges from 0.65 eV for (Al0.20Ga0.80)2O3 to 1.75 eV for (Al0.65Ga0.35)2O3 and is likely due to an increase in interfacial disorder as a result of annealing. Concurrently, the conduction band offsets increase, improving carrier confinement for electrons within the heterostructure. The band alignment remains type I (nested gap) across the entire composition range examined.",

author = "Chaker Fares and Zahabul Islam and Aman Haque and Max Knei{\ss} and {Von Wenckstern}, Holger and Marius Grundmann and Marko Tadjer and Fan Ren and Pearton, {S. J.}",

note = "Funding Information: The project or effort depicted was also sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova). Research at NRL was supported by the Office of Naval Research, partially under Award Number N00014-15-1-2392. The authors at Leipzig thank J{\"o}rg Lenzner for EDX measurements and Monika Hahn for PLD target preparation. M.K. acknowledges support by the European Social Fund within the Young Investigator Group “Oxide Heterostructures” (SAB 100310460) and the Leipzig School for Natural Sciences BuildMoNa.",

year = "2019",

doi = "10.1149/2.0251911jss",

language = "English (US)",

volume = "8",

pages = "P751--P756",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "12",

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TY - JOUR

T1 - Effect of annealing on the band alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65

AU - Fares, Chaker

AU - Islam, Zahabul

AU - Haque, Aman

AU - Kneiß, Max

AU - Von Wenckstern, Holger

AU - Grundmann, Marius

AU - Tadjer, Marko

AU - Ren, Fan

AU - Pearton, S. J.

N1 - Funding Information: The project or effort depicted was also sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova). Research at NRL was supported by the Office of Naval Research, partially under Award Number N00014-15-1-2392. The authors at Leipzig thank Jörg Lenzner for EDX measurements and Monika Hahn for PLD target preparation. M.K. acknowledges support by the European Social Fund within the Young Investigator Group “Oxide Heterostructures” (SAB 100310460) and the Leipzig School for Natural Sciences BuildMoNa.

PY - 2019

Y1 - 2019

N2 - Heterostructures of Atomic Layer Deposited SiO2 on thin layers of (AlxGa1-x)2O3 with x = 0.2 - 0.65 deposited by Pulsed Laser Deposition were annealed at 600°C to simulate ohmic contact formation in MOS devices. The valence band offsets decrease significantly as a result of this annealing, with the change dependent on the initial Al composition. The decrease ranges from 0.65 eV for (Al0.20Ga0.80)2O3 to 1.75 eV for (Al0.65Ga0.35)2O3 and is likely due to an increase in interfacial disorder as a result of annealing. Concurrently, the conduction band offsets increase, improving carrier confinement for electrons within the heterostructure. The band alignment remains type I (nested gap) across the entire composition range examined.

AB - Heterostructures of Atomic Layer Deposited SiO2 on thin layers of (AlxGa1-x)2O3 with x = 0.2 - 0.65 deposited by Pulsed Laser Deposition were annealed at 600°C to simulate ohmic contact formation in MOS devices. The valence band offsets decrease significantly as a result of this annealing, with the change dependent on the initial Al composition. The decrease ranges from 0.65 eV for (Al0.20Ga0.80)2O3 to 1.75 eV for (Al0.65Ga0.35)2O3 and is likely due to an increase in interfacial disorder as a result of annealing. Concurrently, the conduction band offsets increase, improving carrier confinement for electrons within the heterostructure. The band alignment remains type I (nested gap) across the entire composition range examined.

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Effect of annealing on the band alignment of ALD SiO₂ on (Al_xGa_1-x)₂O₃ for x = 0.2 - 0.65

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