Effect of annealing temperature on the formation of SrBi2Ta2O9 (SBT) thin films

D. Ravichandran, K. Yamakawa, R. Roy, A. S. Bhalla, S. Trolier-McKinstry, R. Guo, L. E. Cross

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Abstract

In this paper we report on synthesis of SBT thin-films by sol-gel processing. Sr metal, Bi, 2-ethyl hexanoate and Ta-ethoxide were used as precursors. Thin-films with nominal composition SrBi2Ta2O9 and SBT+10% excess Bi content were made. Films were annealed at various temperatures to study the microstructure, crystallization temperature and the polarization values. Good crystallization of SBT was obtained by annealing at 700 °C-2 hrs, independent of the Bi content in the films. Films annealed in oxygen atmosphere at 800 °C-2 hrs did not show any significant change in the polarization value. Crack free films were made with film thicknesses of 0.4 μm. Films annealed at 800 °C-2 hrs showed a grain size of approximately 0.2 μm, and reasonably good polarization values of 5 μC/cm2. In contrast, films prepared with 10% excess Bi showed a very fine grain size <0.1 μm with a lower polarization values of 1.5 μC/cm2.

Original languageEnglish (US)
Pages601-603
Number of pages3
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ravichandran, D., Yamakawa, K., Roy, R., Bhalla, A. S., Trolier-McKinstry, S., Guo, R., & Cross, L. E. (1996). Effect of annealing temperature on the formation of SrBi2Ta2O9 (SBT) thin films. 601-603. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .